Secondary crystalline phases and mechanical properties of heat-treated Si3N4
Creators
Description
The silicon nitrides containing various amount of Yb2O3 were sintered at 1800 deg. C and a pressure of 25 MPa for 1 h. The fracture toughness of silicon nitride improved with the content of Yb2O3. XRD and transmission electron microscopy (TEM) showed that a Yb4Si2O7N2 phase appeared when 10 wt.% of Yb2O3 was added. Then, a heat-treatment of 6 h was made on the ceramics. Compared with the as-sintered Si3N4, the fracture toughness of the post-heat-treated Si3N4 increased with addition of 6 or 8 wt.% Yb2O3, but the fracture toughness did not increase with addition of 4 or 10 wt.% Yb2O3. Based on SEM analysis, the increase in fracture toughness was due to the formation of a microstructure which contained small matrix grains with some exaggerated grains. In the silicon nitride containing 10 wt.% Yb2O3, the grain boundary crystalline phase was changed from Yb4Si2O7N2 to Yb2SiO5, which resulted in an adverse influence in the fracture toughness
Additional details
Identifiers
- DOI
- 10.1016/S0921-5093(03)00622-1;
- arXiv
- arXiv:cond-mat/0303111v1;
- PII
- S0921509303006221;
Publishing Information
- Journal Title
- Materials Science and Engineering. A, Structural Materials: Properties, Microstructure and Processing
- Journal Volume
- 363
- Journal Issue
- 1-2
- Journal Page Range
- p. 93-98
- ISSN
- 0921-5093
- CODEN
- MSAPE3
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 38073318
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CERAMICS; FRACTURE PROPERTIES; GRAIN BOUNDARIES; HEAT TREATMENTS; SCANNING ELECTRON MICROSCOPY; SILICON NITRIDES; TRANSMISSION ELECTRON MICROSCOPY; X-RAY DIFFRACTION; YTTERBIUM OXIDES
- Descriptors DEC
- CHALCOGENIDES; COHERENT SCATTERING; DIFFRACTION; ELECTRON MICROSCOPY; MECHANICAL PROPERTIES; MICROSCOPY; MICROSTRUCTURE; NITRIDES; NITROGEN COMPOUNDS; OXIDES; OXYGEN COMPOUNDS; PNICTIDES; RARE EARTH COMPOUNDS; SCATTERING; SILICON COMPOUNDS; YTTERBIUM COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2003 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.