Published December 22, 2005 | Version v1
Journal article

Dependence of electrical and optical properties of sol-gel prepared undoped cadmium oxide thin films on annealing temperature

  • 1. Centro de Investigacion y de Estudios Avanzados del IPN, Unidad Queretaro, A.P. I-798, Queretaro, Qro. 76001 (Mexico)
  • 2. Centro de Investigacion y de Estudios Avanzados del IPN, Departamento de Fisica, A.P. 14-740, Mexico 07360 D.F. (Mexico)

Description

The effect of the annealing temperature (T a) on the optical, electrical and structural properties of the undoped cadmium oxide (CdO) thin films obtained by the sol-gel method, using a simple precursor solution, was studied. All the CdO films annealed in the range from 200 to 450 deg. C are polycrystalline with (111) preferential orientation and present high optical transmission > 85% for wavelengths above 500 nm. The resistivity decreases as T a increases until it reaches a value of 6 x 10-4 Ω cm for T a 350 deg. C. For higher temperatures the resistivity experiences a slight increase. Images obtained by atomic force microscopy show an evident incremental change of the aggregate size (clusters of grains) as T a increases. The grain size also increases when T a increases as observed in data calculated from X-ray measurements

Additional details

Identifiers

DOI
10.1016/j.tsf.2005.07.237;
PII
S0040-6090(05)01105-3;

Publishing Information

Journal Title
Thin Solid Films
Journal Volume
493
Journal Issue
1-2
Journal Page Range
p. 83-87
ISSN
0040-6090
CODEN
THSFAP

Optional Information

Copyright
Copyright (c) 2005 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.