Growth of TiO2 Thin Film on Various Substrates using RF Magnetron Sputtering
- 1. Microelectronic and Nanotechnology-Shamsuddin Research Center (MiNT-SRC), Faculty of Electrical and Electronic Engineering, Universiti Tun Hussein Onn Malaysia (UTHM), 86400 Batu Pahat, Johor D.T. (Malaysia)
Description
The conductivity of Titanium Dioxide (TiO2) thin film fabricated using Radio Frequency (RF) Magnetron Sputtering on Silicon (Si), Indium doped--Tin Oxide (ITO) and microscope glass (M) substrates is presented in this paper. The dependant of thin film thickness and type of substrate been discussed. TiO2 was deposited using Ti target in Ar+O2(45:10) mixture at 250 W for 45, 60, 75, 90, 105 and 120 minute. Resultant thickness varies from 295 nm to 724 nm with deposition rate 6.4 nm/min. On the other hand, resistivity, Rs value for ITO substrate is between 5.72x10-7 to 1.54x10-6Ω.m, Si substrate range is between 3.52x10-6 to 1.76x10-5Ω.m and M substrate range is between 99 to 332 Ω.m. The value of resistivity increases with the thickness of the thin film.
Additional details
Identifiers
- DOI
- 10.1063/1.3573725;
Publishing Information
- Journal Title
- AIP Conference Proceedings
- Journal Volume
- 1328
- Journal Issue
- 1
- Journal Page Range
- p. 190-192
- ISSN
- 0094-243X
- CODEN
- APCPCS
Conference
- Title
- Malaysia annual physics conference 2010
- Acronym
- PERFIK-2010
- Dates
- 27-30 Oct 2010
- Place
- Damai Laut (Malaysia)
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 42103279
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CRYSTAL GROWTH; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; GLASS; INDIUM ADDITIONS; MAGNETRONS; MICROSCOPES; MIXTURES; RADIOWAVE RADIATION; SCANNING ELECTRON MICROSCOPY; SILICON; SPUTTERING; SUBSTRATES; THICKNESS; THIN FILMS; TIN OXIDES; TITANIUM OXIDES
- Descriptors DEC
- ALLOYS; CHALCOGENIDES; DIMENSIONS; DISPERSIONS; ELECTRICAL PROPERTIES; ELECTROMAGNETIC RADIATION; ELECTRON MICROSCOPY; ELECTRON TUBES; ELECTRONIC EQUIPMENT; ELEMENTS; EQUIPMENT; FILMS; INDIUM ALLOYS; MATERIALS; MICROSCOPY; MICROWAVE EQUIPMENT; MICROWAVE TUBES; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; RADIATIONS; SEMIMETALS; TIN COMPOUNDS; TITANIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Notes
- (c) 2011 American Institute of Physics