Temperature-electrical instability in cadmium antimonide single crystals

Results of studying static volt-ampere characteristics (VAC) of n-CdSb monocrystals, doped with tellurium and having deep energy levels in forbidden gap belonging to tellurium atoms are presented. Concentration of active impurities estimated by concentration of free carriers at room temperature was within 1x1016-1x1018 cm-3 for tellurium. All measurements were carried out in the nitrogen temperature range. Experiments have shown that the character of obtained results is independent on crystal orientation and on composition and methods of obtaining contacts