Published 1982
| Version v1
Journal article
Ionometric analyses concerning gettering of copper atoms in silicon
Creators
- 1. Humboldt-Universitaet, Berlin (German Democratic Republic). Sektion Physik
Description
Ionometric analyses concerning the gettering of copper in silicon have been carried out with a 350 kV ion accelerator. The solubility of copper in ion-damaged and highly doped n+ layers of silicon was measured. The result was that the interstitial copper atoms occupy lattice positions in the n+ layer, but are distributed randomly in an ion-damaged zone. A simple model of the gettering process sufficiently explains the results. (author)
Additional details
Additional titles
- Original title (German)
- Ionometrische Untersuchungen zur Getterung von Kupferatomen in Siliziumeinkristallen
Publishing Information
- Journal Title
- Wiss. Z. Humboldt-Univ. Berl., Math.-Naturwiss. Reihe
- Journal Volume
- 31
- Journal Issue
- 4
- Series
- Wiss. Z. Humboldt-Univ. Berl., Math.-Naturwiss. Reihe.
- Journal Page Range
- 361-369
- ISSN
- 0522-9863
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- German Democratic Republic
- INIS RN
- 14777636
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ANNEALING; COPPER; CRYSTAL DEFECTS; DEPTH; DOPED MATERIALS; GETTERING; HIGH TEMPERATURE; ION IMPLANTATION; LAYERS; MONOCRYSTALS; PIXE ANALYSIS; RUTHERFORD SCATTERING; SILICON; SOLUBILITY; SPATIAL DISTRIBUTION; TEMPERATURE DEPENDENCE; VERY HIGH TEMPERATURE
- Descriptors DEC
- CHEMICAL ANALYSIS; CRYSTAL STRUCTURE; CRYSTALS; DIMENSIONS; DISTRIBUTION; ELASTIC SCATTERING; ELEMENTS; HEAT TREATMENTS; MATERIALS; METALS; NONDESTRUCTIVE ANALYSIS; SCATTERING; SEMIMETALS; TRANSITION ELEMENTS; X-RAY EMISSION ANALYSIS