Published February 1996
| Version v1
Journal article
Standard sample preparation for the analysis of several metals on silicon wafer
Creators
- 1. Nippon Steel Corp., Kawasaki, Kanagawa (Japan). Advanced and Technology Research Lab
Description
Short communication
Additional details
Publishing Information
- Journal Title
- Analytical Sciences
- Journal Volume
- 12
- Journal Issue
- 1
- Journal Page Range
- p. 141-143.
- ISSN
- 0910-6340
- CODEN
- ANSCEN
INIS
- Country of Publication
- Japan
- Country of Input or Organization
- Japan
- INIS RN
- 27062338
- Subject category
- S07: ISOTOPES AND RADIATION SOURCES;
- Resource subtype / Literary indicator
- No Abstract
- Descriptors DEI
- ANGULAR DISTRIBUTION; CONCENTRATION RATIO; ELEMENT ABUNDANCE; FLUORESCENCE SPECTROSCOPY; POLLUTION; SAMPLE PREPARATION; SILICON; STANDARDS; SURFACE PROPERTIES; TRANSITION ELEMENTS; X-RAY SPECTROSCOPY
- Descriptors DEC
- ABUNDANCE; DISTRIBUTION; ELEMENTS; EMISSION SPECTROSCOPY; METALS; SEMIMETALS; SPECTROSCOPY