Published May 2, 1974 | Version v1
Journal article Metadata-only

C.W. operation of ion-implanted GaAs Read-type IMPATT diodes

Creators

  • 1. Hughes Research Labs., Malibu, Calif. (USA)

Description

no abstract available

Additional details

Identifiers

DOI
10.1049/el:19740119;

Publishing Information

Journal Title
Electronics Letters
Journal Volume
10
Journal Issue
9
Series
Electron. Lett.
Journal Page Range
157-158
ISSN
0013-5194

INIS

Country of Publication
United Kingdom
Country of Input or Organization
United Kingdom
INIS RN
5133729
Subject category
S07: ISOTOPES AND RADIATION SOURCES;
Descriptors DEI
ARSENIC; CRYSTAL DOPING; EPITAXY; GALLIUM; GHZ RANGE 01-100; ION IMPLANTATION; MICROWAVE EQUIPMENT; SCHOTTKY DEFECTS; SEMICONDUCTOR DIODES
Descriptors DEC
CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELECTRONIC EQUIPMENT; ELEMENTS; FREQUENCY RANGE; GHZ RANGE; METALS; POINT DEFECTS; SEMICONDUCTOR DEVICES; SEMIMETALS; VACANCIES

Optional Information

Notes
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