Tunable viscous layers in Corbino geometry using density junctions
- 1. Department of Physics, Faculty of Science, National University of Singapore, Science Drive 3, Singapore 117542, Singapore
- 2. CSIRO, Bradfield Road, West Lindfield NSW 2070, Australia
- 3. Australian Research Council Centre of Excellence in Low-Energy Electronics Technologies, The University of New South Wales, Sydney 2052, Australia
- 4. School of Physics, University of New South Wales, Kensington, NSW 2052, Australia
- 5. Centre for Advanced 2D Materials, National University of Singapore, 6 Science Drive 2, Singapore 117546, Singapore
- 6. Department of Materials Science and Engineering, National University of Singapore, 9 Engineering Drive 1, Singapore 117575, Singapore
- 7. Yale-NUS College, 16 College Avenue West, Singapore 138527, Singapore
- 8. Department of Physics, Washington University in St. Louis, St. Louis, Missouri 63130, USA
Description
In sufficiently clean materials where electron-electron interactions are strong compared to momentum-relaxing scattering processes, electron transport resembles the flow of a viscous fluid. We study hydrodynamic electron transport across density interfaces (n-n junctions) in a 2DEG in the Corbino geometry. From numerical simulations in comsol using realistic parameters, we show that we can produce tunable viscous layers at the density interface by varying the density ratio of charge carriers. We quantitatively explain this observation with simple analytic expressions together with boundary conditions at the interface. We also show signatures of these viscous layers in the magnetoresistance. Breaking down viscous and Ohmic contributions, we find that when the outer radial region of the Corbino has higher charge density compared to the inner region, the viscous layers at the interface serve to suppress the magnetoresistance produced by momentum-relaxing scattering. Conversely, the magnetoresistance is enhanced when the inner region has higher density than the outer. Our results add to the repertoire of techniques for engineering viscous electron flows, which hold a promise for applications in future electronic devices.
Additional details
Identifiers
- DOI
- 10.1103/PhysRevB.110.125409;
- arXiv
- arXiv:2405.00381;
- Crossref Funder ID
- 10.13039/501100001381;
Publishing Information
- Journal Title
- Physical Review B
- Journal Volume
- 110
- Journal Issue
- 12
- Journal Page Range
- 11 pgs.
- ISSN
- 1550-235X
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- BOUNDARY CONDITIONS; CHARGE CARRIERS; CHARGE DENSITY; CHARGED-PARTICLE TRANSPORT; COMPUTERIZED SIMULATION; DENSITY; ELECTRONS; FLUIDS; GEOMETRY; HYDRODYNAMICS; INTERFACES; LAYERS; MAGNETORESISTANCE; SCATTERING; STRONG INTERACTIONS; VISCOSITY
- Descriptors DEC
- ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; FERMIONS; FLUID MECHANICS; FUNDAMENTAL INTERACTIONS; INTERACTIONS; LEPTONS; MATHEMATICS; MECHANICS; PHYSICAL PROPERTIES; RADIATION TRANSPORT; SIMULATION
Optional Information
- Copyright
- ©2024 American Physical Society
- Notes
- Record automatically processed
- Funding organization
- National Research Foundation Singapore