Published April 1973
| Version v1
Journal article
Effect of dislocations on silicon infrared absorption spectra
- 1. AN SSSR, Leningrad. Fiziko-Tekhnicheskij Inst.
Description
no abstract available
Additional details
Additional titles
- Original title (Russian)
- Влияние дислокаций на инфракрасные спектры поглощения кремния
Publishing Information
- Journal Title
- Fiz. Tverd. Tela
- Journal Volume
- 15
- Journal Issue
- 4
- Series
- Fiz. Tverd. Tela.
- Journal Page Range
- 1136-1140
INIS
- Country of Publication
- USSR
- Country of Input or Organization
- USSR
- INIS RN
- 4074852
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ABSORPTION SPECTROSCOPY; ANISOTROPY; COMPRESSION; DEFORMATION; DIAGRAMS; DISLOCATIONS; ELECTRON SPIN RESONANCE; INFRARED SPECTRA; MONOCRYSTALS; P-TYPE CONDUCTORS; SILICON
- Descriptors DEC
- CRYSTAL DEFECTS; CRYSTAL STRUCTURE; CRYSTALS; ELEMENTS; LINE DEFECTS; MAGNETIC RESONANCE; RESONANCE; SEMICONDUCTOR MATERIALS; SEMIMETALS; SPECTRA; SPECTROSCOPY
Optional Information
- Notes
- For English translation see the journal Sov. Phys.-Solid State.