Spatial distribution of the B-site inhomogeneity in an as-grown Pb(In1/2Nb1/2)O3 single crystal studied by a complementary use of x-ray and neutron scatterings
- 1. Japan Atomic Energy Agency, Quantum Beam Science Directorate, Synchrotron Radiation Research Unit, Sayo, Hyogo (Japan)
- 2. Tokyo Univ., Inst. for Solid State Physics, Neutron Science Laboratory, Tokai, Ibaraki (Japan)
- 3. Kwansei Gakuin Univ., School of Science and Technology, Advanced Research Center of Science, Sanda, Hyogo (Japan)
- 4. Gifu Univ., School of Engineering, Dept. of Electrical and Electronic Engineering, Gifu, Gifu (Japan)
Description
Structural properties of as-grown Pb(In1/2Nb1/2)O3 (PIN) single crystals at room temperature (RT) were investigated by x-ray and neutron scattering techniques, taking much account of the difference in the penetration depth and spatial resolution of x-rays and those of neutrons. A strong diffuse scattering was observed by x-ray while h/4k/40 superlattice reflections were found by neutron, indicating a relaxor state in the outer-layer of the crystal and an antiferroelectric (AFE) state in the bulk. The phonon dispersion was measured for the first time for the PIN series. Two transverse optic (TO1 and TO2) modes were clarified near the zone center though neither water-fall behavior nor folding of phonon branches was confirmed. We have thus concluded that a major part of the as-grown PIN crystal at RT is ferroelectric (FE). These results imply that the B-site chemical ordering, i.e., inhomogeneity, which controls the structural properties of PIN, is unevenly distributed throughout the crystal. We speculate that small AFE grains coexist with the FE matrix while the outer-layer is in a relaxor state in the as-grown PIN. (author)
Additional details
Publishing Information
- Journal Title
- Journal of the Physical Society of Japan
- Journal Volume
- 75
- Journal Issue
- 2
- Journal Page Range
- p. 024606.1-024606.6
- ISSN
- 0031-9015
INIS
- Country of Publication
- Japan
- Country of Input or Organization
- Japan
- INIS RN
- 37067623
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ANNEALING; ANTIFERROELECTRIC MATERIALS; CRYSTAL STRUCTURE; CRYSTAL-PHASE TRANSFORMATIONS; CUBIC LATTICES; ENERGY TRANSFER; INDIUM COMPOUNDS; LATTICE PARAMETERS; LEAD OXIDES; NEUTRON DIFFRACTION; NIOBIUM COMPOUNDS; ORDER-DISORDER MODEL; PERMITTIVITY; PHONONS; SUPERLATTICES; TRANSITION TEMPERATURE; X-RAY DIFFRACTION
- Descriptors DEC
- CHALCOGENIDES; COHERENT SCATTERING; CRYSTAL LATTICES; CRYSTAL STRUCTURE; DIELECTRIC MATERIALS; DIELECTRIC PROPERTIES; DIFFRACTION; ELECTRICAL PROPERTIES; HEAT TREATMENTS; LEAD COMPOUNDS; MATERIALS; MATHEMATICAL MODELS; NUCLEAR MODELS; OXIDES; OXYGEN COMPOUNDS; PHASE TRANSFORMATIONS; PHYSICAL PROPERTIES; QUASI PARTICLES; REFRACTORY METAL COMPOUNDS; SCATTERING; THERMODYNAMIC PROPERTIES; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Notes
- 29 refs., 7 figs.