Published 2001
| Version v1
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Blistering in silicon at consecutive implantation of helium and hydrogen ions
Creators
- 1. Inst. Fiziki Poluprovodnikov SO RAN, Novosibirsk (Russian Federation)
Description
no abstract available
Files
34049196.pdf
Files
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Additional details
Additional titles
- Original title (Russian)
- Блистеринг в кремнии при последовательной имплантации ионов гелия и водорода
Publishing Information
- Publisher
- MGU
- Imprint Place
- Moscow (Russian Federation)
- Imprint Title
- Theses of reports of 31. International conference on physics of interaction of charged particles with crystals
- Imprint Pagination
- 160 p.
- Journal Page Range
- p. 117
- Report number
- INIS-RU--463
Conference
- Title
- 31. International conference on physics of interaction of charged particles with crystals
- Original Conference Title
- 31. Mezhdunarodnaya konferentsiya po fizike vzaimodejstviya zaryazhennykh chastits s kristallami
- Dates
- 28-30 May 2001
- Place
- Moscow (Russian Federation)
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- Russian Federation
- INIS RN
- 34049196
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- No Abstract, Conference
- Descriptors DEI
- ANNEALING; BLISTERS; CRYSTAL DEFECTS; HELIUM 4 BEAMS; HYDROGEN IONS 2 PLUS; ION IMPLANTATION; PHYSICAL RADIATION EFFECTS; RADIATION DOSES; SILICON
- Descriptors DEC
- BEAMS; CATIONS; CHARGED PARTICLES; CRYSTAL STRUCTURE; DOSES; ELEMENTS; HEAT TREATMENTS; HYDROGEN IONS; ION BEAMS; IONS; MOLECULAR IONS; RADIATION EFFECTS; SEMIMETALS
Optional Information
- Notes
- Imprint:Tezisy dokladov 31. Mezhdunarodnoj konferentsii po fizike vzaimodejstviya zaryazhennykh chastits s kristallami