Functional plasmonic antenna scanning probes fabricated by induced-deposition mask lithography
Creators
- 1. Molecular Foundry, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, CA 94720 (United States)
- 2. Energy Biosciences Institute, Calvin Laboratory, University of California at Berkeley, Berkeley, CA 94720 (United States)
Description
We have fabricated plasmonic bowtie antennae on the apex of silicon atomic-force microscope cantilever tips that enhance the local silicon Raman scattering intensity by ∼4 x 104 when excited near the antenna resonance. The antennae were fabricated using a novel method, induced-deposition mask lithography (IDML), capable of creating high-purity metallic nanostructures on non-planar, non-conducting substrates with high repeatability. IDML involves electron-beam-induced deposition of a W or SiOx hard mask on the material to be pattered, here a 20 nm Au film, followed by Ar ion etching to remove the mask and the unmasked gold, leaving a chemically pure Au bowtie antenna. Antenna function and reproducibility was confirmed by comparing Raman spectra for excitation polarized parallel and perpendicular to the antenna axis, as well as by dark-field spectroscopic characterization of resonant modes. The field enhancement of these plasmonic AFM antennae tips was comparable with antennae produced by electron-beam lithography on flat substrates.
Availability note (English)
Available from http://dx.doi.org/10.1088/0957-4484/21/6/065306Additional details
Identifiers
- DOI
- 10.1088/0957-4484/21/6/065306;
- PII
- S0957-4484(10)28780-9;
Publishing Information
- Journal Title
- Nanotechnology (Print)
- Journal Volume
- 21
- Journal Issue
- 6
- Journal Page Range
- [6 p.]
- ISSN
- 0957-4484
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 43022255
- Subject category
- S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Descriptors DEI
- ANTENNAS; ARGON IONS; ATOMIC FORCE MICROSCOPY; DEPOSITION; ELECTRON BEAMS; ETCHING; EXCITATION; FILMS; GOLD; IMPURITIES; NANOSTRUCTURES; PROBES; RAMAN EFFECT; RAMAN SPECTRA; RESONANCE; RESPIRATORS; SILICON; SILICON OXIDES; SUBSTRATES
- Descriptors DEC
- BEAMS; CHALCOGENIDES; CHARGED PARTICLES; ELECTRICAL EQUIPMENT; ELEMENTS; ENERGY-LEVEL TRANSITIONS; EQUIPMENT; IONS; LEPTON BEAMS; METALS; MICROSCOPY; OXIDES; OXYGEN COMPOUNDS; PARTICLE BEAMS; SEMIMETALS; SILICON COMPOUNDS; SPECTRA; SURFACE FINISHING; TRANSITION ELEMENTS