Published March 31, 2006 | Version v1
Journal article

Behavior of shallow acceptor impurities in uniaxially stressed silicon and in synthetic diamond studied by μ-SR

  • 1. Joint Institute for Nuclear Research, Dubna, Moscow reg., 141980 (Russian Federation)
  • 2. University Babes-Bolyai, 3400 Cluj-Napoca (Romania)
  • 3. Moscow Institute of Physics and Technology, 141700 Dolgoprudny, Moscow reg. (Russian Federation)
  • 4. Paul Scherrer Institut, CH-5232 Villigen PSI (Switzerland)
  • 5. Natural Sciences Center of Institute of General Physics, Russian Academy of Sciences 119991 Moscow (Russian Federation)
  • 6. Joint Institute for Nuclear Research, Dubna, Moscow reg., 141980 (Russian Federation): Paul Scherrer Institut, CH-5232 Villigen PSI (Switzerland)

Description

The results of investigating the behavior of the boron impurity in synthetic diamond and the effect of uniaxial static pressure on the aluminum acceptor in silicon are presented. The data on the hyperfine interaction and on the relaxation of the magnetic moment of Al acceptor in silicon were obtained. It was found that the uniaxial stress changed both the absolute value and the temperature dependence of the relaxation rate of the acceptor. Unlike the case in silicon, in CVD diamond the paramagnetic shift in the muon spin precession frequency was not observed within the accuracy of the measurements, and a missing fraction of muon polarization was found at T<90K

Additional details

Identifiers

DOI
10.1016/j.physb.2005.11.110;
PII
S0921-4526(05)01327-X;

Publishing Information

Journal Title
Physica. B, Condensed Matter
Journal Volume
374-375
Journal Page Range
p. 390-394
ISSN
0921-4526
CODEN
PHYBE3

Conference

Title
10. international conference on muon spin rotation, relaxation and resonance
Dates
8-12 Aug 2005
Place
Oxford (United Kingdom)

Optional Information

Copyright
Copyright (c) 2005 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.