Published 1989 | Version v1
Journal article Metadata-only

Metastability of electrical properties of dislocations in silicon

Creators

  • 1. USSR Academy of Sciences, Chernogolovka (USSR). Institute of Problems of Microelectronics Technology and Superpure Materials

Description

The energy spectrum of plastically deformed silicon was observed to depend on cooling conditions. A conclusion has been drawn that centers exhibiting charge-state-controlled metastability are associated with dislocations. The effect of light at liquid nitrogen temperature on the transition between different metastable states has been studied. (author) 5 refs., 2 figs

Additional details

Publishing Information

Journal Title
Materials Science Forum
Journal Volume
38-41
Series
Mater. Sci. Forum.
Journal Page Range
1373-1377
ISSN
0255-5476
CODEN
MSFOE

Conference

Title
15. International conference on defects in semiconductors (ICDS-15).
Dates
22-26 Aug 1988.
Place
Budapest (Hungary).

INIS

Country of Publication
Switzerland
Country of Input or Organization
Switzerland
INIS RN
20066776
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
COOLING; DEFORMATION; DISLOCATIONS; ELECTRICAL PROPERTIES; METASTABLE STATES; SCHOTTKY BARRIER DIODES; SILICON; STABILITY
Descriptors DEC
CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELEMENTS; ENERGY LEVELS; EXCITED STATES; LINE DEFECTS; PHYSICAL PROPERTIES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SEMIMETALS