Radiation damage in InSb by alpha particles

The development and annealing of radiation damage in InSb, caused by helium ions, were examined using mainly Rutherford backscattering analysis with channeling. Transmission electron microscopy and secondary ion mass spectroscopy of the material were also done on some samples after implantation. InSb was implanted with 50keV He+ up to a dose of 1017 ions/cm2 at temperatures from 77 K to 525 K and rates varying from 2,2 x 1013 to 2,6 x 1014 ions.cm-2.s-1. Three different temperature regimes in the development of radiation damage in InSb, can be distinguished after implantation of helium ions. Amorphous InSb started to anneal from the inside of the material, beyond the damage range. The thickness of the regrown crystalline layer increased, while the amount of dechanneling in the layer decreased, at higher temperatures. Only incomplete annealing of the crystal, implanted near room temperature, could be accomplished by isochronous heating up to the melting temperature. Roughly equivalent annealing is found after the crystal is subjected to a pulsed electron beam with a relatively low energy density (∼ 0,08 J/cm2). 170 refs., 60 figs., 7 tabs