Published November 2003 | Version v1
Journal article

Effects of N+ ion implantation on lipid peroxidation in soybean seedling

  • 1. Chinese Academy of Sciences, Hefei (China). Inst. of Plasma Physics, Key Laboratory of Ion Beam Bioengineering

Description

Soybean seeds of Fengdou-101 were implanted by N+ ions. Cotyledon samples (24h, 96h) were collected randomly during cotyledons to primary leaves seedlings stage for testing. The effects of N+ ion (E=25 keV) implantation (0-10.4x1016 N+/cm2) on the activities of peroxidase (POD), catalase (CAT) and superoxides dismutase (SOD), content of malondialdehyde (MDA) and leakage of electrolyte were investigated in soybean seedlings. The results show that the SOD and CAT were the highest with doses from 6.5 x 1016 to 7.8 x 1016 N+/cm2. The POD activity kept relatively stable level when the dose was lower than 5.2 x 1016 N+/cm2. The N+ ion implantation of soybean seeds reduced the accumulation of MDA and electrolytic leakage of cotyledons, and the lowest MDA content and the electrolyte leakage was found at 6.5 x 1016 N+/cm2. It indicates that N+ ion implantation may reduce lipid peroxidation and improve the ability of cold acclimation in soybean seedlings

Additional details

Publishing Information

Journal Title
Journal of Radiation Research and Radiation Processing
Journal Volume
21
Journal Issue
4
Journal Page Range
p. 243-246
ISSN
1000-3436