Nonadiabatic interaction between electrons and Jahn-Teller distortions in a silicon vacancy
Creators
- 1. Department of Physics, Niigata University, Ikarashi, Niigata 950-2181 (Japan)
- 2. Center for Transdisciplinary Research, Niigata University, Ikarashi, Niigata 950-2181 (Japan)
Description
Recently, Goto et al. have discovered anomalous elastic softening due to vacancy in crystalline silicon at very low temperature. To investigate the quantum state of the silicon vacancy, we introduce a cluster model which includes the electron-lattice coupling between electrons and Jahn-Teller distortions together with the Coulomb interaction between electrons. By using the numerical diagonalization method, we take into account of both the nonadiabatic and the correlation effects. We find that the 3-fold orbital degeneracy in the ground state of a silicon vacancy is stable against the Jahn-Teller distortions because of the strong quantum fluctuation due to the nonadiabatic coupling between electrons and Jahn-Teller distortions. The obtained result is a striking contrast to the previous theoretical results within the adiabatic approximation and is consistent with the newly observed experiment
Additional details
Identifiers
- DOI
- 10.1016/j.jmmm.2006.10.414;
- PII
- S0304-8853(06)01620-9;
Publishing Information
- Journal Title
- Journal of Magnetism and Magnetic Materials
- Journal Volume
- 310
- Journal Issue
- 2
- Journal Page Range
- p. 993-995
- ISSN
- 0304-8853
- CODEN
- JMMMDC
Conference
- Title
- 17. international conference on magnetism
- Dates
- 20-25 Aug 2006
- Place
- Kyoto (Japan)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 39027139
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ADIABATIC APPROXIMATION; CLUSTER MODEL; ELECTRON CORRELATION; ELECTRON-PHONON COUPLING; ELECTRONS; FLUCTUATIONS; GROUND STATES; JAHN-TELLER EFFECT; SILICON; VACANCIES
- Descriptors DEC
- APPROXIMATIONS; CALCULATION METHODS; CORRELATIONS; COUPLING; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELEMENTARY PARTICLES; ELEMENTS; ENERGY LEVELS; FERMIONS; LEPTONS; MATHEMATICAL MODELS; NUCLEAR MODELS; POINT DEFECTS; SEMIMETALS; VARIATIONS
Optional Information
- Copyright
- Copyright (c) 2006 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.