Published April 15, 2009 | Version v1
Journal article

Electric field evolution of charge and energy transfer in molecule-doped polymer light-emitting diodes

  • 1. Department of Optoelectronic Information and Engineering, Zhejiang University, Hangzhou 310027 (China)
  • 2. Department of Polymer Science and Engineering, State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310027 (China)
  • 3. Zhejiang-California International Nanosystems Institute, Zhejiang University, Hangzhou 310027 (China)

Description

The electroluminescence (EL) from tetramethyl ester of perylene-3,4,9,10-tetracarboxylic acid (TMEP)-doped poly(vinylcarbazole) (PVK) light-emitting diodes and their current-voltage characteristics were investigated. The results indicated that field-emission tunneling injection predominated in the ITO/TMEP:PVK/Al diodes at high applied voltages. With increasing the TMEP dopant density, the injection barrier for holes was slightly reduced. Under injection-limited conditions, the possible kinetic processes were discussed in view of the field evolution of the EL spectra and the energy level alignment in the diode configuration. With increasing the field intensity, different emission components varying their intensities in EL spectra indicates that both charge transfer and energy transfer occurred in TMEP-doped PVK layer. These transfer processes are influenced by varying the concentration of TMEP dopants as electron traps. The results indicate that the dynamic equilibrium among carrier recombination, charge transfer and energy transfer, can be adjusted by dopant concentration and external bias. This information helps to establish a design framework for host-dopant systems

Availability note (English)

Available from http://dx.doi.org/10.1016/j.matchemphys.2008.10.033

Additional details

Identifiers

DOI
10.1016/j.matchemphys.2008.10.033;
PII
S0254-0584(08)00827-4;

Publishing Information

Journal Title
Materials Chemistry and Physics
Journal Volume
114
Journal Issue
2-3
Journal Page Range
p. 660-664
ISSN
0254-0584
CODEN
MCHPDR

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
40068613
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
DOPED MATERIALS; ELECTRIC FIELDS; ELECTROLUMINESCENCE; ENERGY TRANSFER; FIELD EMISSION; LIGHT EMITTING DIODES; PERYLENE; POLYMERS; TUNNEL EFFECT
Descriptors DEC
AROMATICS; CONDENSED AROMATICS; EMISSION; LUMINESCENCE; MATERIALS; ORGANIC COMPOUNDS; PHOTON EMISSION; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES

Optional Information

Copyright
Copyright (c) 2008 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.