Published July 16, 1977
| Version v1
Journal article
Annealing experiments on fast neutron irradiated selenium single crystals
Creators
- 1. Valtion Teknillinen Tutkismuskeskus, Espoo (Finland)
- 2. Lappeenranta University of Technology, Skinnarila (Finland)
Description
The effect of annealing on fast neutron damaged selenium single crystals is studied. Recovery of conductance under illumination is one and a half decades at temperatures near 200 K after 80 K irradiation and is explained by close-pair recombination. During isothermal annealing the dark conductivity activation energy increases. Also a shift of +14 meV of the exciton peak in the wavelength modulated reflectance spectrum is observed. These effects are explained by trapping of interstitials to dislocations and impurities attracted to them. (author)
Additional details
Identifiers
Publishing Information
- Journal Title
- Physica Status Solidi (a)
- Journal Volume
- 42
- Journal Issue
- 1
- Series
- Phys. Status Solidi A.
- Journal Page Range
- 241-245
- ISSN
- 0031-8965
INIS
- Country of Publication
- German Democratic Republic
- Country of Input or Organization
- German Democratic Republic
- INIS RN
- 8341618
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ACTIVATION ENERGY; ANNEALING; DISLOCATIONS; ELECTRIC CONDUCTIVITY; FAST NEUTRONS; INTERSTITIALS; MONOCRYSTALS; NEUTRON BEAMS; NEUTRON FLUENCE; PHYSICAL RADIATION EFFECTS; SELENIUM; TRAPPING
- Descriptors DEC
- BARYONS; BEAMS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; CRYSTALS; ELECTRICAL PROPERTIES; ELEMENTARY PARTICLES; ELEMENTS; ENERGY; FERMIONS; HADRONS; HEAT TREATMENTS; LINE DEFECTS; NEUTRONS; NUCLEON BEAMS; NUCLEONS; PARTICLE BEAMS; PHYSICAL PROPERTIES; POINT DEFECTS; RADIATION EFFECTS; SEMIMETALS
Optional Information
- Notes
- Updated automatically by Metadata and Full-Text Enrichment Agent