Published April 17, 2007 | Version v1
Miscellaneous Metadata-only

Epitaxy of Cu(In,Ga)S2 on Si substrates

Creators

Description

Aim of this theis is to fabricate homogeneous epitaxial layers of the chalcopyrite semiconductor CuIn2-xGaxS2 of Si substrates with special regards to the lattice matching to silicon. The epitaxial CIGS layers are fabricated by means of the mol;ecular beam epitaxy. The characterization of the layers pursues concerning their composition by means of the Rutherford backscattering and concerning structural properties by means of transmission electron microscopy, diffraction of high-energetic electrons in reflection, selected-area electron diffractions, as well as to a large part by means of the X-ray diffraction

Availability note (English)

Available from TIB Hannover

Additional details

Additional titles

Original title (German)
Epitaxie von Cu(In,Ga)S

Publishing Information

Imprint Pagination
112 p.

INIS

Country of Publication
Germany
Country of Input or Organization
Germany
INIS RN
40015749
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Thesis, Non-conventional Literature
Descriptors DEI
BRAGG REFLECTION; CHEMICAL COMPOSITION; COPPER SULFIDES; ELECTRON DIFFRACTION; GALLIUM SULFIDES; INDIUM SULFIDES; LATTICE PARAMETERS; LAYERS; MOLECULAR BEAM EPITAXY; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTOR MATERIALS; SILICON; SUBSTRATES; TETRAGONAL LATTICES; TRANSMISSION ELECTRON MICROSCOPY; X-RAY DIFFRACTION
Descriptors DEC
CHALCOGENIDES; COHERENT SCATTERING; COPPER COMPOUNDS; CRYSTAL GROWTH METHODS; CRYSTAL LATTICES; CRYSTAL STRUCTURE; DIFFRACTION; ELECTRON MICROSCOPY; ELEMENTS; EPITAXY; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; MATERIALS; MICROSCOPY; REFLECTION; SCATTERING; SEMIMETALS; SPECTROSCOPY; SULFIDES; SULFUR COMPOUNDS; TRANSITION ELEMENT COMPOUNDS