Published February 25, 2007 | Version v1
Journal article

Thermal properties of Sr3Ga2Ge4O14 single crystals grown by the vertical Bridgman method

  • 1. Shanghai Institute of Ceramics, Chinese Academy of Science, No. 1295 Dingxi Road, Shanghai 200050 (China)

Description

Sr3Ga2Ge4O14 (SGG) has been grown by the vertical Bridgman method. The dielectric constants ε11T and ε33T at room temperature is 13.61 and 18.18, respectively. The dielectric measurements show that SGG crystals display relative high temperature stability and high frequency stability. Thermal properties including specific heat, thermal diffusivity, thermal conductivity and thermal expansion have been investigated as a function of temperature for the first time. The specific heat of the SGG crystals has been measured to be 0.459J/(gK) at 298K. The thermal diffusivity and the thermal conductivity for SGG crystals are about 0.540mm2/s and 1.243W/(mK) at 298K, respectively. The average thermal expansion coefficients along the a- and c-directions of SGG crystals, are calculated from 298 to 973K as α11=6.5x10-6K-1 and α33=5.8x10-6K-1, respectively

Additional details

Identifiers

DOI
10.1016/j.mseb.2006.11.013;
PII
S0921-5107(06)00672-6;

Publishing Information

Journal Title
Materials Science and Engineering. B, Solid-State Materials for Advanced Technology
Journal Volume
137
Journal Issue
1-3
Journal Page Range
p. 180-183
ISSN
0921-5107
CODEN
MSBTEK

Optional Information

Copyright
Copyright (c) 2006 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.