Published December 4, 2013 | Version v1
Journal article Metadata-only

GaP ring-like nanostructures on GaAs (100) with In0.15Ga0.85As compensation layers

Creators

  • 1. Semiconductor Device Research Laboratory (Nanotec Center of Excellence) Department of Electrical Engineering, Faculty of Engineering, Chulalongkorn University, Bangkok, 10330 (Thailand)

Description

We present the fabrication of GaP ring-like nanostructures on GaAs (100) substrates with inserted In0.15Ga0.85As compensation layers. The samples are grown by droplet epitaxy using solid-source molecular beam epitaxy. The dependency of nanostructural and optical properties of GaP nanostructures on In0.15Ga0.85As layer thickness is investigated by ex-situ atomic force microscope (AFM) and photoluminescence (PL). It is found that the characteristics of GaP ring-like structures on GaAs strongly depend on the In0.15Ga0.85As layer thickness

Additional details

Identifiers

DOI
10.1063/1.4848482;

Publishing Information

Journal Title
AIP Conference Proceedings
Journal Volume
1566
Journal Issue
1
Journal Page Range
p. 455-456
ISSN
0094-243X
CODEN
APCPCS

Conference

Title
31. international conference on the physics of semiconductors
Acronym
ICPS 2012
Dates
29 Jul - 3 Aug 2012
Place
Zurich (Switzerland)

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
45083114
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ATOMIC FORCE MICROSCOPY; GALLIUM ARSENIDES; GALLIUM PHOSPHIDES; LAYERS; MOLECULAR BEAM EPITAXY; NANOSTRUCTURES; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SOLIDS; SUBSTRATES
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL GROWTH METHODS; EMISSION; EPITAXY; GALLIUM COMPOUNDS; LUMINESCENCE; MICROSCOPY; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PHOTON EMISSION; PHYSICAL PROPERTIES; PNICTIDES

Optional Information

Notes
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