Published 1985 | Version v1
Journal article Metadata-only

Channeling measurement of residual damage in silicon

Creators

  • 1. Ceskoslovenska Akademie Ved, Rez. Ustav Jaderne Fyziky
  • 2. Ceske Vysoke Uceni Technicke, Prague (Czechoslovakia). Fakulta Elektrotechnicka
  • 3. Tesla, Roznov pod Radhostem (Czechoslovakia)
  • 4. Ceske Vysoke Uceni Technicke, Prague (Czechoslovakia). Fakulta Jaderna a Fysikalne Inzenyrska

Description

no abstract available

Additional details

Publishing Information

Journal Title
Czech. J. Phys.
Journal Volume
35
Journal Issue
4
Series
Czech. J. Phys.
Journal Page Range
465-468
ISSN
0011-4626
CODEN
CZYPA

INIS

Country of Publication
Czech Republic
Country of Input or Organization
Serbia and Montenegro
INIS RN
17037662
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
No Abstract
Descriptors DEI
ANNEALING; ARSENIC ADDITIONS; BACKSCATTERING; CHANNELING; CRYSTAL DEFECTS; CRYSTAL LATTICES; HELIUM 4 BEAMS; ION IMPLANTATION; LASER RADIATION; MONOCRYSTALS; SILICON
Descriptors DEC
BEAMS; CRYSTAL STRUCTURE; CRYSTALS; ELECTROMAGNETIC RADIATION; ELEMENTS; HEAT TREATMENTS; ION BEAMS; RADIATIONS; SCATTERING; SEMIMETALS

Optional Information

Notes
Letter-to-the-editor.