Spin current generation from sputtered Y3Fe5O12 films
Creators
- 1. Institute for Materials Research, Tohoku University, Sendai 980-8577 (Japan)
- 2. WPI Advanced Institute for Materials Research, Tohoku University, Sendai 980-8577 (Japan)
- 3. PRESTO, Japan Science and Technology Agency, Saitama 332-0012 (Japan)
- 4. Advanced Science Research Center, Japan Atomic Energy Agency, Tokai 319-1195 (Japan)
- 5. CREST, Japan Science and Technology Agency, Tokyo 102-0076 (Japan)
Description
Spin current injection from sputtered yttrium iron garnet (YIG) films into an adjacent platinum layer has been investigated by means of the spin pumping and the spin Seebeck effects. Films with a thickness of 83 and 96 nanometers were fabricated by on-axis magnetron rf sputtering at room temperature and subsequent post-annealing. From the frequency dependence of the ferromagnetic resonance linewidth, the damping constant has been estimated to be (7.0 ± 1.0) × 10−4. Magnitudes of the spin current generated by the spin pumping and the spin Seebeck effect are of the same order as values for YIG films prepared by liquid phase epitaxy. The efficient spin current injection can be ascribed to a good YIG|Pt interface, which is confirmed by the large spin-mixing conductance (2.0 ± 0.2) × 1018 m−2.
Additional details
Identifiers
- DOI
- 10.1063/1.4898161;
- arXiv
- arXiv:1410.5987v1;
Publishing Information
- Journal Title
- Journal of Applied Physics
- Journal Volume
- 116
- Journal Issue
- 15
- Journal Page Range
- p. 153902-153902.6
- ISSN
- 0021-8979
- CODEN
- JAPIAU
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 46012002
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ANNEALING; CURRENTS; FERRITE GARNETS; FERROMAGNETIC RESONANCE; FILMS; FREQUENCY DEPENDENCE; INJECTION; INTERFACES; IRON OXIDES; LAYERS; LIQUID PHASE EPITAXY; MAGNETRONS; PLATINUM; SEEBECK EFFECT; SPIN; SPUTTERING; TEMPERATURE RANGE 0273-0400 K; THICKNESS; YTTRIUM COMPOUNDS
- Descriptors DEC
- ANGULAR MOMENTUM; CHALCOGENIDES; CRYSTAL GROWTH METHODS; DIMENSIONS; ELECTRON TUBES; ELECTRONIC EQUIPMENT; ELEMENTS; EPITAXY; EQUIPMENT; HEAT TREATMENTS; INTAKE; IRON COMPOUNDS; MAGNETIC RESONANCE; METALS; MICROWAVE EQUIPMENT; MICROWAVE TUBES; MINERALS; OXIDE MINERALS; OXIDES; OXYGEN COMPOUNDS; PARTICLE PROPERTIES; PLATINUM METALS; RESONANCE; TEMPERATURE RANGE; TRANSITION ELEMENT COMPOUNDS; TRANSITION ELEMENTS
Optional Information
- Notes
- (c) 2014 AIP Publishing LLC