Published 1991
| Version v1
Journal article
Lanthanide (Yb, Er, Tm, Pr, Ho) and actinide (U) activated luminescence in III-V semiconductors
- 1. Air Force Office of Scientific Research, Washington, DC (United States)
- 2. Air Force Inst. of Techn. Wright-Patterson A.F.B., OH (United States)
Description
Through photoluminescence the characteristic 4f- and 5f-emissions in the 0.9 to 1.7 μm spectral range were investigated in lanthanide and actinide implanted binary and ternary III-V semiconductors. The resulting sharp emissions were seen around 1.0 μm for Yb3+ in InP, GaP, and AlGaAs; 1.5 μm for Er3+ in GaAs, InP, GaP, AlAs, and AlGaAs of four different Al mole fractions; 1.2 μm for Tm3+ in GaAs and InP; 1.1, 1.3, and 1.6 μm for Pr3+ in GaAs and 1.3 μm for Pr3+ in InP; 0.9 and 1.1 μm for Ho3+ in GaAs; and from 1.6 to 1.7 μm for U in GaAs, InP, and AlGaAs
Additional details
Publishing Information
- Journal Title
- European Journal of Solid State and Inorganic Chemistry
- Journal Volume
- 28
- Journal Issue
- Suppl
- Series
- Eur. J. Solid State Inorg. Chem.
- Journal Page Range
- 159-162
- CODEN
- EJSCE
Conference
- Title
- Conference on New Developments in f-Elements.
- Dates
- 4-7 Sep 1990.
- Place
- Leuven (Belgium).
INIS
- Country of Publication
- France
- Country of Input or Organization
- France
- INIS RN
- 23003653
- Subject category
- S74: ATOMIC AND MOLECULAR PHYSICS;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- DOPED MATERIALS; ERBIUM COMPOUNDS; HOLMIUM COMPOUNDS; NEAR INFRARED RADIATION; PHOTOLUMINESCENCE; PRASEODYMIUM COMPOUNDS; THULIUM COMPOUNDS; ULTRALOW TEMPERATURE; URANIUM COMPOUNDS; YTTERBIUM COMPOUNDS
- Descriptors DEC
- ACTINIDE COMPOUNDS; ELECTROMAGNETIC RADIATION; EMISSION; INFRARED RADIATION; LUMINESCENCE; MATERIALS; PHOTON EMISSION; RADIATIONS; RARE EARTH COMPOUNDS