Published April 30, 2004
| Version v1
Journal article
A study of gallium drops on germanium(111)
Creators
Description
Ga drops on a Ge(111) surface have been investigated by scanning Auger electron spectroscopy. Surface segregation of both Ga on Ge, and of Ge on Ga, was observed at about 600 K. These results are found to be consistent with the various driving forces of surface segregation. Following ion sputtering of the Ge substrate at about 400 K, the Ga drops spontaneously move over the substrate, thereby healing sputter-induced damage at the Ge surface
Additional details
Identifiers
- DOI
- 10.1016/j.apsusc.2004.01.034;
- PII
- S0169433204000388;
Publishing Information
- Journal Title
- Applied Surface Science
- Journal Volume
- 228
- Journal Issue
- 1-4
- Journal Page Range
- p. 357-364
- ISSN
- 0169-4332
- CODEN
- ASUSEE
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 38091881
- Subject category
- S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- AUGER ELECTRON SPECTROSCOPY; GALLIUM; GERMANIUM; SEGREGATION; SPUTTERING; SURFACES; TEMPERATURE RANGE 0400-1000 K
- Descriptors DEC
- ELECTRON SPECTROSCOPY; ELEMENTS; METALS; SPECTROSCOPY; TEMPERATURE RANGE
Optional Information
- Copyright
- Copyright (c) 2004 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.