Published September 1, 2010 | Version v1
Journal article

Theoretical study of Ni adsorption on the GaN(0 0 0 1) surface

  • 1. GEMA - Grupo de Estudio de Materiales, Departamento de Fisica, Universidad Nacional de Colombia, Bogota (Colombia)
  • 2. Grupo de Fisica de la Materia Condensada - GFMC, Departamento de Fisica, Universidad del Norte, Barranquilla (Colombia)
  • 3. Grupo Avanzado de Materiales y Sistemas Complejos - GAMASCO, Universidad de Cordoba, Monteria (Colombia)
  • 4. Centro de Nanociencias y Nanotecnologia de la UNAM, Ensenada, Baja California (Mexico)

Description

First-principles pseudo-potential calculations within density-functional theory framework are performed in order to study the structural and electronic properties of nickel adsorption and diffusion on a GaN(0 0 0 1)-2x2 surface. The adsorption energies and potential energy surfaces are investigated for a Ni adatom on the Ga-terminated (0 0 0 1) surface of GaN. This surface is also used to study the effect of the nickel surface coverage. The results show that the most stable positions of a Ni adatom on GaN(0 0 0 1) are at the H3 sites and T4 sites, for low and high Ni coverage respectively. In addition, confirming previous experimental results, we have found that the growth of Ni monolayers on the GaN(0 0 0 1) surface is possible.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.apsusc.2010.04.078

Additional details

Identifiers

DOI
10.1016/j.apsusc.2010.04.078;
PII
S0169-4332(10)00590-8;

Publishing Information

Journal Title
Applied Surface Science
Journal Volume
256
Journal Issue
22
Journal Page Range
p. 6495-6498
ISSN
0169-4332
CODEN
ASUSEE

Optional Information

Copyright
Copyright (c) 2010 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.