Published August 19, 2013 | Version v1
Journal article Metadata-only

Influence of GaAs surface termination on GaSb/GaAs quantum dot structure and band offsets

Creators

  • 1. Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)
  • 2. Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)

Description

We have investigated the influence of GaAs surface termination on the nanoscale structure and band offsets of GaSb/GaAs quantum dots (QDs) grown by molecular-beam epitaxy. Transmission electron microscopy reveals both coherent and semi-coherent clusters, as well as misfit dislocations, independent of surface termination. Cross-sectional scanning tunneling microscopy and spectroscopy reveal clustered GaSb QDs with type I band offsets at the GaSb/GaAs interfaces. We discuss the relative influences of strain and QD clustering on the band offsets at GaSb/GaAs interfaces

Additional details

Identifiers

DOI
10.1063/1.4818270;

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
103
Journal Issue
8
Journal Page Range
p. 082107-082107.4
ISSN
0003-6951
CODEN
APPLAB

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
45039097
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
DISLOCATIONS; FABRICATION; GALLIUM ANTIMONIDES; GALLIUM ARSENIDES; INTERFACES; LAYERS; MOLECULAR BEAM EPITAXY; QUANTUM DOTS; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR MATERIALS; SPECTROSCOPY; STRAINS; SURFACE TREATMENTS; SURFACES; TRANSMISSION ELECTRON MICROSCOPY; VALENCE
Descriptors DEC
ANTIMONIDES; ANTIMONY COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL DEFECTS; CRYSTAL GROWTH METHODS; CRYSTAL STRUCTURE; ELECTRON MICROSCOPY; EPITAXY; GALLIUM COMPOUNDS; LINE DEFECTS; MATERIALS; MICROSCOPY; NANOSTRUCTURES; PNICTIDES

Optional Information

Notes
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