Published June 1997
| Version v1
Journal article
Nitrogenation and oxygenation at silicon surface by nitrogen ion-implantation
- 1. Academia Sinica, SH (China). Shanghai Inst. of Nuclear Research
Description
no abstract available
Additional details
Publishing Information
- Journal Title
- Journal of Quingdao University. Natural Sciences Edition
- Journal Issue
- Suppl
- Journal Page Range
- p. 309
- ISSN
- 1006-1037
INIS
- Country of Publication
- China
- Country of Input or Organization
- China
- INIS RN
- 29043855
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- No Abstract
- Descriptors DEI
- BACKSCATTERING; CHANNELING; ION BEAMS; ION IMPLANTATION; ION PROBES; NITROGEN IONS; RUTHERFORD SCATTERING; SILICON; SILICON NITRIDES; SILICON OXIDES
- Descriptors DEC
- BEAMS; CHALCOGENIDES; CHARGED PARTICLES; ELASTIC SCATTERING; ELEMENTS; IONS; NITRIDES; NITROGEN COMPOUNDS; OXIDES; OXYGEN COMPOUNDS; PNICTIDES; PROBES; SCATTERING; SEMIMETALS; SILICON COMPOUNDS
Optional Information
- Notes
- Proceedings of Tenth National Conference of Nuclear Physics, Qingdao, August, 1997