Published February 1982 | Version v1
Journal article Metadata-only

Influence of non-uniformity of laser beam intensity on the surface layer structure of implanted silicon crystals

Creators

  • 1. Institute of Nuclear Research, Warsaw (Poland)
  • 2. Polska Akademia Nauk, Warsaw. Inst. Fizyki

Description

The influence of the non-uniformity of intensity distribution in a laser beam on the surface layer structure of As-implanted silicon crystals as well as a method for homogenizing a pulsed laser beam is described. (author)

Additional details

Publishing Information

Journal Title
Cryst. Res. Technol.
Journal Volume
17
Journal Issue
2
Series
Cryst. Res. Technol.
Journal Page Range
197-203
ISSN
0023-4753

INIS

Country of Publication
Germany
Country of Input or Organization
German Democratic Republic
INIS RN
13697438
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
ANNEALING; ARSENIC ISOTOPES; CRYSTAL DOPING; CRYSTAL STRUCTURE; ENERGY SPECTRA; ION BEAMS; ION IMPLANTATION; LASER RADIATION; LAYERS; MONOCRYSTALS; SILICON; SURFACES; X-RAY DIFFRACTION
Descriptors DEC
BEAMS; COHERENT SCATTERING; CRYSTALS; DIFFRACTION; ELECTROMAGNETIC RADIATION; ELEMENTS; HEAT TREATMENTS; RADIATIONS; SCATTERING; SEMIMETALS; SPECTRA