Published May 6, 2002
| Version v1
Journal article
Epitaxial growth of thin films - a statistical mechanical model
Creators
- 1. S.N. Bose National Centre for Basic Sciences, Salt Lake, Calcutta (India)
- 2. Oxford Physics, Clarendon Laboratory, Oxford (United Kingdom)
Description
A theoretical framework is developed to describe experiments on the structure of epitaxial thin films, particularly niobium on sapphire. We extend the hypothesis of dynamical scaling to apply to the structure of thin films from its conventional application to simple surfaces. We then present a phenomenological continuum theory that provides a good description of the observed scattering and the measured exponents. Finally the results of experiment and theory are compared. (author)
Availability note (English)
Available online at the Web site for the Journal of Physics. Condensed Matter (ISSN 1361-6448X) http://www.iop.org/Additional details
Identifiers
- URL
- http://www.iop.org/;
Publishing Information
- Journal Title
- Journal of Physics. Condensed Matter
- Journal Volume
- 14
- Journal Issue
- 17
- Journal Page Range
- p. 4385-4392
- ISSN
- 0953-8984
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 33022852
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- CALCULATION METHODS; CRYSTAL MODELS; CRYSTAL STRUCTURE; EPITAXY; NIOBIUM; SAPPHIRE; SURFACE AREA; THIN FILMS
- Descriptors DEC
- CORUNDUM; CRYSTAL GROWTH METHODS; ELEMENTS; FILMS; MATHEMATICAL MODELS; METALS; MINERALS; OXIDE MINERALS; REFRACTORY METALS; SURFACE PROPERTIES; TRANSITION ELEMENTS