Published May 6, 2002 | Version v1
Journal article

Epitaxial growth of thin films - a statistical mechanical model

  • 1. S.N. Bose National Centre for Basic Sciences, Salt Lake, Calcutta (India)
  • 2. Oxford Physics, Clarendon Laboratory, Oxford (United Kingdom)

Description

A theoretical framework is developed to describe experiments on the structure of epitaxial thin films, particularly niobium on sapphire. We extend the hypothesis of dynamical scaling to apply to the structure of thin films from its conventional application to simple surfaces. We then present a phenomenological continuum theory that provides a good description of the observed scattering and the measured exponents. Finally the results of experiment and theory are compared. (author)

Availability note (English)

Available online at the Web site for the Journal of Physics. Condensed Matter (ISSN 1361-6448X) http://www.iop.org/

Additional details

Identifiers

Publishing Information

Journal Title
Journal of Physics. Condensed Matter
Journal Volume
14
Journal Issue
17
Journal Page Range
p. 4385-4392
ISSN
0953-8984

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
33022852
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
CALCULATION METHODS; CRYSTAL MODELS; CRYSTAL STRUCTURE; EPITAXY; NIOBIUM; SAPPHIRE; SURFACE AREA; THIN FILMS
Descriptors DEC
CORUNDUM; CRYSTAL GROWTH METHODS; ELEMENTS; FILMS; MATHEMATICAL MODELS; METALS; MINERALS; OXIDE MINERALS; REFRACTORY METALS; SURFACE PROPERTIES; TRANSITION ELEMENTS