Published February 2007 | Version v1
Journal article Metadata-only

Two-dimensional electron gas properties in AlGaAs/GaAs heterojunctions with thin layers of AlGaAs

Creators

  • 1. Novosibirskij Gosudarstvennyj Univ., Novosibirsk (Russian Federation)
  • 2. Inst. Fiziki Poluprovodnikov Sibirskogo Otdeleniya RAN, Novosibirsk (Russian Federation)

Description

The transport properties of two-dimensional electron gas situated at a small distance to the surface (15 -32.5 nm) in AlGaAs/GaAs heterojunction are investigated. The strong influence of the surface on the behavior of the conductivity of the two-dimensional electron gas is established. The screening effect of the scattering of two-dimensional electron gas at charged centers by a metallic gate is observed, too

Abstract (Russian)

Изучены транспортные свойства двумерного электронного газа, расположенного на малом расстоянии (15 - 32.5 нм) от поверхности в гетеропереходе AlGaAs/GaAs. Установлено сильное влияние поверхности на поведение проводимости двумерного электронного газа. Также обнаружен эффект экранирования металлическим затвором рассеяния двумерных электронов на заряженных центрах

Additional details

Additional titles

Original title (Russian)
Свойства двумерного электронного гаса в гетеропереходах AlGaAs/GaAs с тонкими слоями AlGaAs

Publishing Information

Journal Title
Fizika i Tekhnika Poluprovodnikov
Journal Volume
41
Journal Issue
2
Journal Page Range
p. 186-189
ISSN
0015-3222
CODEN
FTPPA4

INIS

Country of Publication
Russian Federation
Country of Input or Organization
Russian Federation
INIS RN
39023162
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Numerical Data
Descriptors DEI
ALUMINIUM ARSENIDES; CARRIER DENSITY; COULOMB FIELD; ELECTRON GAS; ELECTRON MOBILITY; EXPERIMENTAL DATA; GALLIUM ARSENIDES; HETEROJUNCTIONS; NUCLEAR SCREENING; SCATTERING; THEORETICAL DATA; THICKNESS; THIN FILMS; TWO-DIMENSIONAL CALCULATIONS
Descriptors DEC
ALUMINIUM COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; DATA; DIMENSIONS; ELECTRIC FIELDS; FILMS; GALLIUM COMPOUNDS; INFORMATION; MOBILITY; NUMERICAL DATA; PARTICLE MOBILITY; PNICTIDES; SEMICONDUCTOR JUNCTIONS

Optional Information

Notes
7 refs., 5 figs., 2 tabs.