Effect of impurities on physicochemical properties of Group III Nitride nanowires

GaN nanowires can be grown using almost all the thin film deposition techniques namely molecular beam epitaxy (MBE), organometallic vapor phase epitaxy (OMVPE) and different types of chemical vapor deposition (CVD) methods. MBE growth can produce GaN with ultimate phase purity and crystal quality but is economically challenging. Controlling diameter and surface morphology of GaN nanowires play a crucial role in defining physicochemical properties including electrical, optical, electrochemical and electromechanical properties for large scale production of the nanowire devices. In this context, the effect of oxygen impurity on morphological, structural, optical and chemical characteristics of nonpolar (m and a-axes oriented) GaN nanowires grown using atmospheric pressure chemical vapor deposition (APCVD) technique via vapor-liquid-solid process (VLS) has been studied