Published August 2005
| Version v1
Journal article
Enhanced beam currents of P2+, P3+, and P4+ for use in semiconductor ion implanters
Creators
- 1. Siberian Division of Russian National Research Center, 'A.A. Bochvara Scientific Research Institute for Inorganic Materials', Seversk, 636070 (Russian Federation)
- 2. PVI, Oxnard, California 93031-5023 (United States)
- 3. Institute for Theoretical and Experimental Physics, Moscow, 117218 (Russian Federation)
- 4. Brookhaven National Laboratory, Upton, New York 11973 (United States)
- 5. High Current Electronics Institute, Russian Academy of Sciences, Tomsk, 634055 (Russian Federation)
Description
Considerably enhanced yields of P2+ (8.6 pmA), P3+ (1.9 pmA), and P4+ (0.12 pmA) were obtained using a modified Bernas-Calutron ion source. The source design, experimental layout, and results of extensive optimization studies are described. The improved production of multiply charged ions is of particular interest for applications in semiconductor ion implantation facilities
Additional details
Identifiers
- DOI
- 10.1063/1.1988181;
Publishing Information
- Journal Title
- Review of Scientific Instruments
- Journal Volume
- 76
- Journal Issue
- 8
- Journal Page Range
- p. 083301-083301.5
- ISSN
- 0034-6748
- CODEN
- RSINAK
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 37035591
- Subject category
- S43: PARTICLE ACCELERATORS; S70: PLASMA PHYSICS AND FUSION TECHNOLOGY;
- Descriptors DEI
- BEAM CURRENTS; ION IMPLANTATION; ION SOURCES; OPTIMIZATION; PHOSPHORUS; PHOSPHORUS IONS; SEMICONDUCTOR MATERIALS; YIELDS
- Descriptors DEC
- CHARGED PARTICLES; CURRENTS; ELEMENTS; IONS; MATERIALS; NONMETALS
Optional Information
- Notes
- (c) 2005 American Institute of Physics