Published February 1993
| Version v1
Journal article
Discharge XeF(C-A) laser at reduced gas pressure for a Kr-doping mixture
- 1. Harbin Inst. of Technology, Inst. of Opto-Electronics (China)
Description
The free running XeF(C-A) lasing was achieved in a commercial discharge excited excimer laser at reduced gas pressure of 0.22 MPa and moderate pump rate of 2.76 MW/cm3, using a four-component gas mixture doped by Kr with a net peak gain of 1.24%/cm. The laser output, energy density and intrinsic efficiency were 1.17 mJ, 9 mJ/L and 0.016%, respectively. The laser spectrum showed a peak wavelength at 477 nm and a bandwidth of 32 nm (FWHM)
Additional details
Publishing Information
- Journal Title
- High Power Laser and Particle Beams
- Journal Volume
- 5
- Journal Issue
- 1
- Journal Page Range
- p. 37-41.
- ISSN
- 1001-4322
- CODEN
- QYLIEL
INIS
- Country of Publication
- China
- Country of Input or Organization
- China
- INIS RN
- 25003544
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- ELECTRIC DISCHARGES; ENERGY DENSITY; EXCIMER LASERS; GAIN; GASES; KRYPTON; LASER SPECTROSCOPY; MIXTURES; XENON FLUORIDES
- Descriptors DEC
- AMPLIFICATION; AMPLIFIERS; DISPERSIONS; ELEMENTS; EQUIPMENT; FLUIDS; FLUORIDES; FLUORINE COMPOUNDS; GAS LASERS; HALOGEN COMPOUNDS; LASERS; NONMETALS; RARE GAS COMPOUNDS; RARE GASES; SPECTROSCOPY; XENON COMPOUNDS