Published June 2016 | Version v1
Journal article

Defect engineering of two-dimensional transition metal dichalcogenides

  • 1. Department of Physics, The Pennsylvania State University, University Park, PA 16802 (United States)
  • 2. Center for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, PA 16802 (United States)
  • 3. Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084 (China)
  • 4. Air Force Research Laboratory, Materials and Manufacturing Directorate, RXAS, Wright-Patterson AFB, Ohio 45433 (United States)
  • 5. Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute, 110 Eighth Street, Troy, NY 12180 (United States)
  • 6. Departamento de Física, Universidade Federal de Minas Gerais, Belo Horizonte, Minas Gerais 30123-970 (Brazil)

Description

Two-dimensional transition metal dichalcogenides (TMDs), an emerging family of layered materials, have provided researchers a fertile ground for harvesting fundamental science and emergent applications. TMDs can contain a number of different structural defects in their crystal lattices which significantly alter their physico-chemical properties. Having structural defects can be either detrimental or beneficial, depending on the targeted application. Therefore, a comprehensive understanding of structural defects is required. Here we review different defects in semiconducting TMDs by summarizing: (i) the dimensionalities and atomic structures of defects; (ii) the pathways to generating structural defects during and after synthesis and, (iii) the effects of having defects on the physico-chemical properties and applications of TMDs. Thus far, significant progress has been made, although we are probably still witnessing the tip of the iceberg. A better understanding and control of defects is important in order to move forward the field of Defect Engineering in TMDs. Finally, we also provide our perspective on the challenges and opportunities in this emerging field. (topical review)

Availability note (English)

Available from http://dx.doi.org/10.1088/2053-1583/3/2/022002

Additional details

Identifiers

Publishing Information

Journal Title
2D Materials
Journal Volume
3
Journal Issue
2
Journal Page Range
[21 p.]
ISSN
2053-1583

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
47112581
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
CHALCOGENIDES; CHEMICAL PROPERTIES; CRYSTALS; DEFECTS; REVIEWS; SYNTHESIS; TRANSITION ELEMENT COMPOUNDS; TWO-DIMENSIONAL SYSTEMS
Descriptors DEC
CRYSTAL LATTICES; CRYSTAL STRUCTURE; DOCUMENT TYPES