Defect engineering of two-dimensional transition metal dichalcogenides
Creators
- 1. Department of Physics, The Pennsylvania State University, University Park, PA 16802 (United States)
- 2. Center for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, PA 16802 (United States)
- 3. Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084 (China)
- 4. Air Force Research Laboratory, Materials and Manufacturing Directorate, RXAS, Wright-Patterson AFB, Ohio 45433 (United States)
- 5. Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute, 110 Eighth Street, Troy, NY 12180 (United States)
- 6. Departamento de Física, Universidade Federal de Minas Gerais, Belo Horizonte, Minas Gerais 30123-970 (Brazil)
Description
Two-dimensional transition metal dichalcogenides (TMDs), an emerging family of layered materials, have provided researchers a fertile ground for harvesting fundamental science and emergent applications. TMDs can contain a number of different structural defects in their crystal lattices which significantly alter their physico-chemical properties. Having structural defects can be either detrimental or beneficial, depending on the targeted application. Therefore, a comprehensive understanding of structural defects is required. Here we review different defects in semiconducting TMDs by summarizing: (i) the dimensionalities and atomic structures of defects; (ii) the pathways to generating structural defects during and after synthesis and, (iii) the effects of having defects on the physico-chemical properties and applications of TMDs. Thus far, significant progress has been made, although we are probably still witnessing the tip of the iceberg. A better understanding and control of defects is important in order to move forward the field of Defect Engineering in TMDs. Finally, we also provide our perspective on the challenges and opportunities in this emerging field. (topical review)
Availability note (English)
Available from http://dx.doi.org/10.1088/2053-1583/3/2/022002Additional details
Identifiers
Publishing Information
- Journal Title
- 2D Materials
- Journal Volume
- 3
- Journal Issue
- 2
- Journal Page Range
- [21 p.]
- ISSN
- 2053-1583
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 47112581
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CHALCOGENIDES; CHEMICAL PROPERTIES; CRYSTALS; DEFECTS; REVIEWS; SYNTHESIS; TRANSITION ELEMENT COMPOUNDS; TWO-DIMENSIONAL SYSTEMS
- Descriptors DEC
- CRYSTAL LATTICES; CRYSTAL STRUCTURE; DOCUMENT TYPES