Published January 7, 2008 | Version v1
Journal article Metadata-only

Light-induced instability in current conduction of aluminum nitride thin films embedded with Al nanocrystals

Creators

  • 1. Department of Physics, The University of Hong Kong, Hong Kong (China)
  • 2. School of Mechanical and Aerospace Engineering, Nanyang Technological University, Singapore 639798 (Singapore)
  • 3. School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798 (Singapore)

Description

Al nanocrystals (nc-Al) embedded in AlN thin films have been synthesized by rf magnetron sputtering. The influence of ultraviolet (UV) illumination on electrical characteristics of the nc-Al/AlN thin film system has been investigated. It is shown that the UV illumination could lead to a random change in the conductance of the thin film system. The change in the conductance is attributed to the charge trapping and detrapping in the nc-Al due to the UV illumination

Additional details

Identifiers

DOI
10.1063/1.2828691;

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
92
Journal Issue
1
Journal Page Range
p. 013102-013102.3
ISSN
0003-6951
CODEN
APPLAB

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
39038479
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
ALUMINIUM; ALUMINIUM NITRIDES; CRYSTAL GROWTH; DEPOSITION; ELECTRIC CONDUCTIVITY; INSTABILITY; NANOSTRUCTURES; RANDOMNESS; SEMICONDUCTOR MATERIALS; SPUTTERING; THIN FILMS; TRAPPING; ULTRAVIOLET RADIATION; ULTRAVIOLET SPECTRA; VISIBLE RADIATION
Descriptors DEC
ALUMINIUM COMPOUNDS; ELECTRICAL PROPERTIES; ELECTROMAGNETIC RADIATION; ELEMENTS; FILMS; MATERIALS; METALS; NITRIDES; NITROGEN COMPOUNDS; PHYSICAL PROPERTIES; PNICTIDES; RADIATIONS; SPECTRA

Optional Information

Notes
(c) 2008 American Institute of Physics