Published January 2009 | Version v1
Journal article

Efficient 1.34-μm laser emission of Nd-doped vanadates under in-band pumping with diode lasers

  • 1. National Institute for Laser, Plasma, and Radiation Physics, Laboratory of Solid-State Quantum Electronics, Bucharest R-077125 (Romania)

Description

We describe the output performances of the 1.34-μm 4F3/2 → 4I13/2 transition in Nd-doped vanadates under in-band pumping with diode lasers at the 0.88-μm wavelength, directly into the 4F3/2 emitting level. An end-pumped Nd:YVO4 crystal yielded 3.4 W of continuous-wave (CW) output power for 9.3 W of absorbed pump power. The slope efficiency with respect to the absorbed pump power was 0.43. To the best of our knowledge this is the first demonstration of such a laser system. Comparative results obtained for the pump with diode laser at 0.81 μm, into the highly-absorbing 4F5/2 level, are given in order to prove the advantages of the in-band pumping

Availability note (English)

Available from http://dx.doi.org/10.1002/lapl.200810099

Additional details

Identifiers

Publishing Information

Journal Title
Laser physics letters (Internet)
Journal Volume
6
Journal Issue
1
Journal Page Range
p. 38-43
ISSN
1612-202X