Published November 1999 | Version v1
Journal article

Characteristics of Pt/PbZr0.52Ti0.48O3/Pt and Au/PbZr0.52Ti0.48O3/YBa2Cu3O7-δ capacitors after γ-ray irradiation

  • 1. State Key Lab. of Functional Materials for Informatics, Shanghai Inst. of Metallurgy, the Chinese Academy of Sciences, Shanghai, SH (China)
  • 2. Academia Sinica, Shanghai, SH (China). Shanghai Inst. of Nuclear Research

Description

PbZr0.52Ti0.48O3 (PZT) and YBa2Cu3O7-δ (YBCO) thin films were fabricated by a pulsed laser deposition (PLD) method. The Pt/PZT/Pt ferroelectric capacitors were fabricated on silicon substrates while the Au/PZT/YBCO capacitors were fabricated on LaAlO3 substrates. The capacitance-voltage (C-V) properties and the hysteresis loops of the capacitors were measured before and after γ-ray irradiation. The results show that for Pt/PZT/Pt capacitors, the remanent polarization Pr and the absolute coercive field EC increase while the dielectric constant ε decrease with increasing accumulated dose. For the Au/PZT/YBCO capacitors, Pr and ε decreased with accumulated dose, but the absolute value of the negative and positive coercive fields increased. The results have been interpreted by radiation-induced positive charge trapping at defects in the ferroelectric materials. (orig.)

Additional details

Publishing Information

Journal Title
EPJ. Applied Physics
Journal Volume
8
Journal Issue
2
Journal Page Range
p. 105-109
ISSN
1286-0042
CODEN
EPAPFV

Optional Information

Notes
24 refs.