The study on the silicon microstrip detector

A silicon microstrip detector has been fabricated by the new method of planar process. A high-ohmic (∼ 3 kΩcm) n-doped silicon crystal, oriented in the 1,1,1-direction is used as base material. The sensitive area of detector is a rectangle of 18 mm x 12 mm, 300 strips of 20 μm width, 20 μm pitch and 400 μm thickness. The leakage current is 5 x 10 ma at the reverse bias voltage of 100 v. The distribution of charge collections of the silicon microstrip detector was measured and 5.3 μm of the spatial resolution was obtained