Published March 28, 2014
| Version v1
Journal article
Photoluminescence enhancement of the single InAs quantum dots through plasmonic Au island films
Creators
- 1. State Key Laboratory for Superlattices and Microstructure, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)
Description
The approach of optical positioning the single InAs quantum dots (QDs) was used for investigating QD photoluminescence (PL) enhancement based on plasmonic effect of nanometer-sized Au island films. It is found that the maximum increase of QD PL intensity is about thirty-eight fold after 5-nm thick Au island films are evaporated on the QD sample surface. The enhanced localized excitation field and increased QD radiative decay rate are responsible for this PL enhancement. This provides an alternative way of preparing bright single photon sources based on the plasmonic effect
Additional details
Identifiers
- DOI
- 10.1063/1.4869739;
Publishing Information
- Journal Title
- Journal of Applied Physics
- Journal Volume
- 115
- Journal Issue
- 12
- Journal Page Range
- p. 123104-123104.5
- ISSN
- 0021-8979
- CODEN
- JAPIAU
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 45092381
- Subject category
- S77: NANOSCIENCE AND NANOTECHNOLOGY; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- EXCITATION; GOLD; INDIUM ARSENIDES; PHOTOLUMINESCENCE; PHOTONS; PLASMONS; QUANTUM DOTS; SURFACES; THIN FILMS
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; BOSONS; ELEMENTARY PARTICLES; ELEMENTS; EMISSION; ENERGY-LEVEL TRANSITIONS; FILMS; INDIUM COMPOUNDS; LUMINESCENCE; MASSLESS PARTICLES; METALS; NANOSTRUCTURES; PHOTON EMISSION; PNICTIDES; QUASI PARTICLES; TRANSITION ELEMENTS
Optional Information
- Notes
- (c) 2014 AIP Publishing LLC