Published November 2010 | Version v1
Journal article

Photoinduced stiffening and photoplastic effect of ZnS individual nanobelt in nanoindentation

  • 1. Key Laboratory for Low Dimensional Materials and Application Technology, Xiangtan University, Ministry of Education, Xiangtan 411105 (China)
  • 2. Department of Mechanical Engineering, University of Pittsburgh, Pittsburgh, Pennsylvania 15261 (United States)
  • 3. State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012 (China)

Description

The photoinduced stiffening (PIS) and photoplastic effect (PPE) of ZnS individual nanobelt (NB) were observed by using a nanoindenter in conjunction with an incident ultraviolet (UV) light source system. The results show that the elastic modulus and hardness of ZnS individual NB under UV illumination are at least 32% and 20% larger than those in darkness. The mechanisms of PIS and PPE are interpreted by the increase in electronic strain and Peierls barrier due to the photogeneration of free carriers in ZnS individual NB. The research may offer useful guidelines to the application of optoelectronic devices based on individual nanostructures.

Additional details

Identifiers

Publishing Information

Journal Title
Journal of Applied Physics
Journal Volume
108
Journal Issue
9
Journal Page Range
p. 094305-094305.5
ISSN
0021-8979
CODEN
JAPIAU

Optional Information

Notes
(c) 2010 American Institute of Physics