Published November 9, 2011 | Version v1
Journal article Metadata-only

Toward atom probe tomography of microelectronic devices

Creators

  • 1. Cameca Instruments Inc., 5500 Nobel Drive, Madison, WI 53711 (United States)
  • 2. Université de Rouen, Saint Etienne du Rouvray 76801 FRANCE (France)
  • 3. Cameca SAS, 29 Quai des Grésillons, Gennevilliers 92622 (France)

Description

Atom probe tomography and scanning transmission electron microscopy has been used to analyze a commercial microelectronics device prepared by depackaging and focused ion beam milling. Chemical and morphological data are presented from the source, drain and channel regions, and part of the gate oxide region of an Intel® i5-650 p-FET device demonstrating feasibility in using these techniques to investigate commercial chips.

Availability note (English)

Available from http://dx.doi.org/10.1088/1742-6596/326/1/012030

Additional details

Identifiers

DOI
10.1088/1742-6596/326/1/012030;

Publishing Information

Journal Title
Journal of Physics. Conference Series (Online)
Journal Volume
326
Journal Issue
1
Journal Page Range
[4 p.]
ISSN
1742-6596

Conference

Title
17. international conference on microscopy of semiconducting materials 2011
Dates
4-7 Apr 2011
Place
Cambridge (United Kingdom)

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
43092505
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ATOMS; FIELD EFFECT TRANSISTORS; ION BEAMS; MICROELECTRONICS; OXIDES; PROBES; P-TYPE CONDUCTORS; TOMOGRAPHY; TRANSMISSION ELECTRON MICROSCOPY
Descriptors DEC
BEAMS; CHALCOGENIDES; DIAGNOSTIC TECHNIQUES; ELECTRON MICROSCOPY; MATERIALS; MICROSCOPY; OXYGEN COMPOUNDS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR MATERIALS; TRANSISTORS