Published June 17, 1983
| Version v1
Journal article
TiN as a diffusion barrier between CoSi2 or PtSi and aluminum
Description
The effectiveness of a thin (360 A) layer of reactively sputtered TiN as a diffusion barrier between aluminum and two silicides (PtSi and CoSi2) was evaluated. The chemical composition, structural phases and electrical properties of silicide/Al and silicide/TiN/Al contacts to n-type silicon were studied by Rutherford backscattering spectroscopy, glancing angle X-ray diffraction and Schottky barrier height measurements respectively. The results show that TiN is an effective barrier in these two systems up to at least 4500C, the typical temperature at which aluminum contacts are sintered. (Auth.)
Additional details
Publishing Information
- Journal Title
- Thin Solid Films
- Journal Volume
- 104
- Journal Issue
- 1-2
- Series
- Thin Solid Films.
- Journal Page Range
- 89-99
- ISSN
- 0040-6090
Conference
- Title
- Symposium on interfaces and contacts.
- Dates
- 2-4 Nov 1982.
- Place
- Boston, MA (USA).
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- Switzerland
- INIS RN
- 14791401
- Subject category
- S37: INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ALUMINIUM; BACKSCATTERING; CHEMICAL COMPOSITION; COBALT SILICIDES; DIFFUSION BARRIERS; HELIUM IONS; ION SCATTERING ANALYSIS; PLATINUM SILICIDES; RUTHERFORD SCATTERING; TITANIUM NITRIDES; X-RAY DIFFRACTION
- Descriptors DEC
- CHARGED PARTICLES; CHEMICAL ANALYSIS; COBALT COMPOUNDS; COHERENT SCATTERING; DIFFRACTION; ELASTIC SCATTERING; ELEMENTS; IONS; METALS; NITRIDES; NITROGEN COMPOUNDS; NONDESTRUCTIVE ANALYSIS; PLATINUM COMPOUNDS; SCATTERING; SILICIDES; SILICON COMPOUNDS; TITANIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS