Observation of multiorder coherent Raman sidebands in solid hydrogen film
- 1. Hanyang University, Seoul (Korea, Republic of)
- 2. Japan Science and Technology Corporation, Tokyo (Japan)
- 3. University of Electro-Communications, Tokyo (Japan)
Description
We investigated the Raman coherence characteristics of a solid hydrogen film deposited on a sapphire substrate held at 5.3 K. Using Raman coherence prepared with two single-frequency pulsed lasers, we generated the multiorder coherent Raman sidebands in solid hydrogen film. The highorder Raman sidebands were obtained under strong pumping intensities (≥ 230 MW/cm2). The generated anti-Stokes(AS)-Raman sidebands extend from the ultraviolet (292 nm for the AS5 band) to the visible (565 nm for the AS1 band) region. The multiorder Raman sideband generation is found to be due to the parametric coupling of pump and coupling lasers. The frequency conversion efficiency from pumping beams to the first AS-Raman sideband shows a maximum (14 %) at a pumping intensity of 360 MW/cm2. From an experiment that makes the multimode probe beam beat with the prepared Raman coherence, we found that the prepared Raman coherence replicates the probe beam to its Raman sidebands.
Additional details
Publishing Information
- Journal Title
- Journal of the Korean Physical Society
- Journal Volume
- 45
- Journal Issue
- 1
- Series
- 21 refs, 4 figs
- Journal Page Range
- p. 75-79
- ISSN
- 0374-4884
INIS
- Country of Publication
- Korea, Republic of
- Country of Input or Organization
- Korea, Republic of
- INIS RN
- 41104844
- Subject category
- S97: MATHEMATICAL METHODS AND COMPUTING;
- Descriptors DEI
- CHARGE-COUPLED DEVICES; COHERENT SCATTERING; FILMS; HARMONIC GENERATION; HYDROGEN; MEMORY DEVICES; NUMERICAL ANALYSIS; PHYSICAL VAPOR DEPOSITION; RAMAN SPECTRA; SAPPHIRE
- Descriptors DEC
- CORUNDUM; DEPOSITION; ELEMENTS; FREQUENCY MIXING; MATHEMATICS; MINERALS; NONMETALS; OXIDE MINERALS; SCATTERING; SEMICONDUCTOR DEVICES; SPECTRA; SURFACE COATING