Published 1974 | Version v1
Journal article Metadata-only

Generation centre distribution in boron-implanted silicon p-n junctions

Creators

  • 1. Ministerstvo Ehlektropromyshlennosti SSSR, Moscow

Description

no abstract available

Additional details

Identifiers

DOI
10.1080/10420157408230782;

Publishing Information

Journal Title
Radiation Effects
Journal Volume
22
Journal Issue
3
Series
Radiat. Eff.
Journal Page Range
209-210
ISSN
0033-7579

INIS

Country of Publication
United Kingdom
Country of Input or Organization
United Kingdom
INIS RN
6161322
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
No Abstract
Descriptors DEI
BORON; BORON IONS; CRYSTAL DEFECTS; DISTRIBUTION; DOPED MATERIALS; ION BEAMS; ION IMPLANTATION; JUNCTION DETECTORS; SILICON
Descriptors DEC
BEAMS; CHARGED PARTICLES; CRYSTAL STRUCTURE; ELEMENTS; IONS; MEASURING INSTRUMENTS; RADIATION DETECTORS; SEMICONDUCTOR DETECTORS; SEMIMETALS

Optional Information

Notes
Short communication.; Updated automatically by Metadata and Full-Text Enrichment Agent