Published December 2015 | Version v1
Journal article

Scaling of local and nonlocal resistances in a 2D topological insulator based on HgTe quantum well

  • 1. Instituto de Física da Universidade de São Paulo, 135960-170, São Paulo, SP (Brazil)
  • 2. Institute of Semiconductor Physics, Novosibirsk 630090 (Russian Federation)

Description

We report the observation and systematic investigation of a local and nonlocal transport in HgTe quantum wells with inverted band structure corresponding to the two-dimensional topological insulator phase. We examine the probe spacing and probe configuration dependencies of the resistance near the charge neutrality point, where the transport is dominated by edge states. We provide details on the model, which takes into account the edge and bulk contribution to the total current and reproduces our experimental results. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/2053-1583/2/4/044015

Additional details

Identifiers

Publishing Information

Journal Title
2D Materials
Journal Volume
2
Journal Issue
4
Journal Page Range
[8 p.]
ISSN
2053-1583