Published December 2015
| Version v1
Journal article
Scaling of local and nonlocal resistances in a 2D topological insulator based on HgTe quantum well
Creators
- 1. Instituto de Física da Universidade de São Paulo, 135960-170, São Paulo, SP (Brazil)
- 2. Institute of Semiconductor Physics, Novosibirsk 630090 (Russian Federation)
Description
We report the observation and systematic investigation of a local and nonlocal transport in HgTe quantum wells with inverted band structure corresponding to the two-dimensional topological insulator phase. We examine the probe spacing and probe configuration dependencies of the resistance near the charge neutrality point, where the transport is dominated by edge states. We provide details on the model, which takes into account the edge and bulk contribution to the total current and reproduces our experimental results. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/2053-1583/2/4/044015Additional details
Identifiers
Publishing Information
- Journal Title
- 2D Materials
- Journal Volume
- 2
- Journal Issue
- 4
- Journal Page Range
- [8 p.]
- ISSN
- 2053-1583
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 47113429
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- CONFIGURATION; ELECTRIC CONDUCTIVITY; MERCURY TELLURIDES; QUANTUM WELLS; SCALING; TOPOLOGY; TWO-DIMENSIONAL SYSTEMS
- Descriptors DEC
- CHALCOGENIDES; CRYSTAL LATTICES; CRYSTAL STRUCTURE; ELECTRICAL PROPERTIES; MATHEMATICS; MERCURY COMPOUNDS; NANOSTRUCTURES; PHYSICAL PROPERTIES; TELLURIDES; TELLURIUM COMPOUNDS