Published June 1, 2001
| Version v1
Journal article
Low-resistance IrMn and PtMn tunnel valves for recording head applications
Description
We have investigated the use of ultrathin Al2O3 barriers to fabricate low-resistance tunnel-valve sensors suitable for recording heads. Tunnel valves of the type underlayer/(IrMn or PtMn)/CoFe/Al2O3/CoFe/NiFe/Cap layer have been fabricated by magnetron sputtering. Tunnel barriers are formed by Al metal deposition followed by in situ oxidation, and tunnel-junction test devices are built by photolithography with areas down to 1x1μm2. Specific resistances as low as 13 Ωμm2 with 25% tunnel magnetoresistance have been obtained using Al thicknesses of 6 - 7 Aa. [copyright] 2001 American Institute of Physics
Additional details
Identifiers
- DOI
- 10.1063/1.1361050;
Publishing Information
- Journal Title
- Journal of Applied Physics
- Journal Volume
- 89
- Journal Issue
- 11
- Series
- The American Physical Society
- Journal Page Range
- p. 7353-7355
- ISSN
- 0021-8979
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 32063740
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- DEPOSITION; MAGNETORESISTANCE; MAGNETRONS; OXIDATION; PHYSICS; SPUTTERING; VALVES
- Descriptors DEC
- CHEMICAL REACTIONS; CONTROL EQUIPMENT; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; ELECTRON TUBES; ELECTRONIC EQUIPMENT; EQUIPMENT; FLOW REGULATORS; MICROWAVE EQUIPMENT; MICROWAVE TUBES; PHYSICAL PROPERTIES
Optional Information
- Notes
- Othernumber: JAPIAU000089000011007353000001; 456111MMM
- Funding organization
- (United States)