First-principles study of the stability of free-standing germanene in oxygen atmosphere
- 1. College of Physics and Communication Electronics, Jiangxi Normal University, Nanchang 330022 (China)
- 2. Strong-Field and Ultrafast Photonics Lab, Institute of Laser Engineering, Beijing University of Technology, Beijing 100124 (China)
Description
The O2 dissociation and O atoms adsorption on free-standing germanene are studied by using first-principles calculations in this paper. Compared with the extremely active silicene in oxygen atmosphere, germanene is found to be less active due to an energy barrier for dissociation of about 0.57 eV. Moreover, the dissociated oxygen atom follows two opposite migration pathways on the germanene surface, which is quite different from the case of silicene. Furthermore, the migration and desorption of O atoms at room temperature are relatively difficult due to the strong Ge-O bonding, resulting in the formation of germanium oxides. Our results reveal the interplay between germanene and O2 and suggest the enhanced stability of germanene in oxygen atmosphere compared with silicene
Additional details
Identifiers
- DOI
- 10.1063/1.4931057;
- arXiv
- arXiv:1412.5253v1;
Publishing Information
- Journal Title
- Journal of Applied Physics
- Journal Volume
- 118
- Journal Issue
- 12
- Journal Page Range
- p. 124303-124303.6
- ISSN
- 0021-8979
- CODEN
- JAPIAU
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 47062861
- Subject category
- S37: INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY; S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- ADSORPTION; DESORPTION; DISSOCIATION; GERMANENE; GERMANIUM OXIDES; OXYGEN; SILICENE; SURFACES; TEMPERATURE RANGE 0273-0400 K
- Descriptors DEC
- CHALCOGENIDES; ELEMENTS; GERMANIUM; GERMANIUM COMPOUNDS; METALS; NONMETALS; OXIDES; OXYGEN COMPOUNDS; SEMIMETALS; SILICON; SORPTION; TEMPERATURE RANGE
Optional Information
- Notes
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