Selective Sensors of Nitrogen Dioxide Based on Thin Tungsten Oxide Films under Optical Irradiation
- 1. Tomsk State University (Russian Federation)
Description
It is shown that NO2 present in air, beginning at a concentration of 1 ppm, can be selectively detected by sensors based on Au/WO3:Au thin films activated by laser diode radiation with maximum intensity at 400 nm instead of constant heating. The radiation-activated photodesorption reduces the time of sensor response to NO2. A high humidity of air under conditions of room-temperature irradiation additionally increases the device sensitivity to NO2 due to the appearance of additional adsorption sites. The absence of a sensor response to reducing gases and varying oxygen concentration in the atmosphere is caused by the photodesorption of chemisorbed species during their interaction with holes generated in intrinsic optical transitions in the near-surface region of WO3 film.
Additional details
Identifiers
Publishing Information
- Journal Title
- Technical Physics Letters
- Journal Volume
- 45
- Journal Issue
- 10
- Journal Page Range
- p. 1016-1019
- ISSN
- 1063-7850
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 51093131
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ADSORPTION; AIR; CHEMISORPTION; CONCENTRATION RATIO; GOLD; HEATING; HUMIDITY; IRRADIATION; NITROGEN DIOXIDE; OXYGEN; OXYGEN IONS; SENSITIVITY; SENSORS; TEMPERATURE RANGE 0273-0400 K; THIN FILMS; TUNGSTEN OXIDES
- Descriptors DEC
- CHALCOGENIDES; CHARGED PARTICLES; CHEMICAL REACTIONS; DIMENSIONLESS NUMBERS; ELEMENTS; FILMS; FLUIDS; GASES; IONS; METALS; MOISTURE; NITROGEN COMPOUNDS; NITROGEN OXIDES; NONMETALS; OXIDES; OXYGEN COMPOUNDS; REFRACTORY METAL COMPOUNDS; SEPARATION PROCESSES; SORPTION; TEMPERATURE RANGE; TRANSITION ELEMENT COMPOUNDS; TRANSITION ELEMENTS; TUNGSTEN COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2019 Pleiades Publishing, Ltd.